Fabrication of SnS thin film by rapid thermal processing: effect of annealing temperature in sulfurization process

‏‎suppression of coke formation in thermal cracking by coke inhibitors‎‏

‏‎the main purpose of this research was to:1.develop a coking model for thermal cracking of naphtha.2.study coke inhibition methods using different coke inhibitors.developing a coking model in naphtha cracking reactors requires a suitable model of the thermal cracking reactor based on a reliable kinetic model.to obtain reliable results all these models shall be solved simultaneously.for this pu...

Thermal Annealing Influence over Optical Properties of Thermally Evaporated SnS/CdS Bilayer Thin Films

Thin films of tin sulfide/cadmium sulfide (SnS/CdS) were prepared bythermal evaporation method at room temperature on a glass substrate and then annealedat different temperature with the aim of optimizing the optical properties of the materialfor use in photovoltaic solar cell devices. The effect of annealing on optical propertiesof SnS/CdS film was studied in the temper...

A New Fabrication Process for Thin-film Multijunction Thermal Converters

-Advanced thin film processing and packaging technologies are employed in the fabrication of new planar thinfilm multifunction thermal converters. The processing, packaging, and design features build on experience gained from prior NIST demonstrations of thin-film converters and are optimized for improved sensitivity, bandwidth, manufacturability, and reliability.

Process Optimization of Deposition Conditions for Low Temperature Thin Film Insulators used in Thin Film Transistors Displays

Deposition process for thin insulator used in polysilicon gate dielectric of thin film transistors are optimized. Silane and N2O plasma are used to form SiO2 layers at temperatures below 150 ºC. The deposition conditions as well as system operating parameters such as pressure, temperature, gas flow ratios, total flow rate and plasma power are also studied and their effects are discussed.  The p...

Ferroelectric and microstructural characteristics of SrBi2Ta2O9 thin films crystallized by the rapid thermal annealing process